Journal publications

 

2015

  • Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3, G. von Gastrow, S. Li, M. Putkonen, M. Laitinen, T. Sajavaara and H. Savin, Applied Surface Science 357, 2402 (2015).

  • High efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates P. Ortega, E. Calle, G. von Gastrow, P. Repo, D. Carrio, H. Savin and R. Alcubilla, Progress In Photovoltaics 23, 1448 (2015).

  • Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon G. von Gastrow, R. Alcubilla, P. Ortega, M. Yli-Koski, S. Conesa-Boj, A. Fontcuberta i Morral, H. Savin, Solar Energy Materials and Solar Cells 142, 29 (2015).

  • Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency  H. Savin, P. Repo, G. von Gastrow, P. Ortega, E. Calle, M. Garín, R. Alcubilla, Nature Nanotechnology 10, 624 (2015).

  • Accelerated light-induced degradation for detecting copper contamination in p-type silicon A. Inglese, J. Lindroos and H. Savin, Applied Physics Letters 107, 5  (2015). 

  • Building intuition of iron evolution during solar cell processing through analysis of different process models A. E. Morishige, H. S. Laine, J. Schön, A. Haarahiltunen, J. Hofstetter, C. del Cañizo, M. Schubert, H. Savin, and T. Buonassisi,  Applied Physics A 120, 1357 (2015).

  • Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering Y. Boulfrad, A. Haarahiltunen, H. Savin, E. Øvrelid and L. Arnberg, Progress in photovoltaics 23, 30 (2015).  pre-print

 

2014 and older

  • Gettering of Iron in Silicon Solar Cells With Implanted Emitters  V. Vähänissi, A. Haarahiltunen, M. Yli-Koski, H. Savin, IEEE Journal of Photovoltaics, 4, 1 (2014). post-print

  • Experimental evidence on removing copper and light-induced degradation from silicon by negative charge Y. Boulfrad, J. Lindroos, M. Wagner, F. Wolny, M. Yli-Koski, H. Savin, Applied Physics Letter, 105, 18 (2014). post-print

  • Main defect reactions behind phosphorus diffusion gettering of iron J. Schön, V. Vähänissi, A. Haarahiltunen, M. Schubert, W. Warta, H. Savin, Journal of Applied Physics, 116, 24 (2014). post-print

  • Formation kinetics of copper-related light-induced degradation in crystalline silicon J. Lindroos, H. Savin, Journal of Applied Physics, 116, 23 (2014). post-print

  • Preventing light-induced degradation in multicrystalline silicon  J. Lindroos, Y. Boulfrad, M. Yli-Koski, H. Savin, Journal of Applied Physics, 115, 15 (2014). post-print

  • Spin disorder scattering in a ferromagnetic insulator-on-graphene structure H, Savin, P. Kuivalainen N. Lebedeva and S. Novikov, Physica Status Solidi B 251, 407 (2014).  pre-print

  • Excellent passivation and low reflectivity with atomic layer deposited bilayer coatings for n-type silicon solar cells B.G. Lee, S. Li, G. von Gastrow, M. Yli-Koski, H. Savin, V. Malinen, J. Skarp, S. Choi and H.M. Branz, Thin Solid Films 550, 541 (2014).

  • Magnetic polaron formation in graphene-based single-electron transistor H. Savin, P. Kuivalainen, S. Novikov and N. Lebedeva, Physica Status Solidi B 251, 864 (2014). pre-print

  • Nickel: A very fast diffuser in silicon J. Lindroos, D.P. Fenning, D.J. Backlund, E. Verlage, A. Gorgulla, S.K. Estreicher, H. Savin, T. Buonassisi, Journal of Applied Physics, 113, 204906 (2013). post-print

  • Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon V. Vähänissi, M. Yli-Koski, A. Haarahiltunen, Y. Bao, H. Savin,  Solar Energy Materials and Solar Cells, 114 54, (2013).

  • Impact of phosphorus gettering parameters and initial iron level on silicon solar cell properties V. Vähänissi, A. Haarahiltunen, M. Yli-Koski, H. Savin, Progress in Photovoltaics 21, 1127 (2013).

  • Light-induced degradation in gallium-doped silicon J. Lindroos, A. Haarahiltunen, M. Yli-Koski, M. Schubert, H. Savin, Physica Status Solidi Rapid Research Letters 7, 262 (2013).

  • Effective passivation of black silicon surfaces by atomic layer deposition P. Repo, A. Haarahiltunen, L. Sainiemi, M. Yli-Koski, H. Talvitie, M.C. Schubert, H. Savin,  IEEE Journal of Photovoltaics, 3, 90 (2013).

  • Analyses of the Evolution of Iron-Silicide Precipitates in Multicrystalline Silicon during Solar Cell Processing J. Schön, A.Haarahiltunen, H. Savin, D.P. Fenning, T.Buonassisi, W. Warta, M. C. Schubert, IEEE Journal of Photovoltaics, 3, 131 (2013).

  • Reduction of Light-induced Degradation of Boron-doped Solar-grade Czochralski Silicon by Corona Charging Y. Boulfrad, J. Lindroos, A. Inglese, M. Yli-Koski and H. Savin, Energy Procedia, 38, 531(2013).

  • Ozone-based batch atomic layer deposited Al2O3 for effective surface passivation G.von Gastrow, S. Li, P. Repo, Y. Bao, M. Putkonen and H. Savin, Energy Procedia 38, 890 (2013).

  • n-type black silicon solar cells P. Repo, J. Benick, V. Vähänissi, J. Schön, G. von Gastrow, B. Steinhauser, M.C. Schubert, M.Hermle and H. Savin, Energy Procedia 38, 866 2013.

  • A quantum statistical model for graphene FETs on SiC graphene P. Kuivalainen, H. Savin, N. Lebedeva and S. Novikov, Physica Status Solidi B 250, 1857 (2013).

  • Passivation of black silicon boron emitters with ALD Al2O3 P. Repo, J. Benick, G. von Gastrow, V. Vähänissi, F.D. Heinz, J. Schön, M.C. Schubert and H. Savin, Physica Status Solidi Rapid research Letters, 7, 950 (2013).

  • Enhancement of magnetoresistance due to magnetic polaron formation in magnetic semiconductor single-electron transistors H. Savin, P. Kuivalainen, N. Lebedeva, and S. Novikov, Physica Status Solidi A

  • Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator A. Haarahiltunen, A. Varpula, H. Savin, Journal of Applied Physics, 110, 4 (2011). post-print

  • Phosphorus and boron diffusion gettering of iron in monocrystalline silicon H. Talvitie, V. Vähänissi, A. Haarahiltunen, M. Yli-Koski, H. Savin, Journal of Applied Physics, 109, 9 (2011). post-print

  • Experimental study of iron redistribution between bulk defects and a boron doped layer in silicon wafers H. Talvitie, M. Yli-Koski, A. Haarahiltunen, V. Vähänissi, M. Asghar, and H. Savin, Physica Status Solidi A 208, 2430 (2011).

  • Gettering of iron in CZ-silicon by polysilicon layer A. Haarahiltunen, M. Yli-Koski, H. Talvitie, V. Vähänissi, J. Lindroos, H. Savin,  Phys. Status Solidi C 8, 751 (2011).

  • Silicon Surface Passivation by Al2O3: Effect of ALD Reactants P. Repo, H. Talvitie, S. Li, J. Skarp, H. Savin, Energy Procedia 8, 681 (2011).

  • Effect of thermal history on iron precipitation in crystalline silicon A. Haarahiltunen, M. Yli-Koski, H. Savin,  Energy Procedia 8, 355 (2011).

  • J. Schön, M.C. Schubert, W. Warta, A. Haarahiltunen, H. Savin, Analysis of simultaneous boron and phosphorus diffusion gettering in silicon, Physica Status Solidi A 1-4 (2010).

  • V. Vähänissi, A. Haarahiltunen, H. Talvitie, M. Yli-Koski, J. Lindroos, and H. Savin, Physical mechanisms of boron diffusion gettering of iron in silicon, Phys. Status Solidi Rapid Research Letters 4, No. 5–6, 136–138 (2010).

  • V. Vähänissi , A. Haarahiltunen, M. Yli-Koski, H. Talvitie, M. I. Asghar, and H. Savin, Effect of oxygen in low temperature boron and phosphorus diffusion gettering of iron in Czochralski-grown silicon, Solid State Phenomena 156, 395 (2010).

  • A. Haarahiltunen, V. Vähänissi , M. Yli-Koski, H. Talvitie, and H. Savin, Analysis of heterogeneous iron precipitation in multicrystalline silicon, Solid State Phenomena 156, 27 (2010).

  • Role of copper in light induced minority-carrier lifetime degradation of silicon H. Savin, M. Yli-Koski, A. Haarahiltunen, Applied Physics Letters, 95, 152111 (2009). post-print

  • Modeling phosphorus diffusion gettering of iron in single crystal silicon A. Haarahiltunen, H. Savin, M. Yli-Koski, H. Talvitie, J. Sinkkonen, Journal of Applied Physics, 105, 023510 (2009). post-print

  • P. Gundel, M. Schubert, W. Kwapil, J. Schön, M. Reiche, H. Savin, M. Yli-Koski, J. A. Sans, G. Martinez-Criado, W. Seifert, W. Warta and E. R. Weberm Micro-photoluminesence spectroscopy on metal precipitates in silicon, Physica Status Solidi Rapid Research Letters, 3, 230 (2009).

  • H. Savin, M. Yli-Koski, A. Haarahiltunen, V. Virkkala, H. Talvitie, M. I. Asghar, and J. Sinkkonen, Gettering in silicon-on-insulator wafers with polysilicon layer, Material Science and Engineering B 159, 259 (2009).

  • H. Talvitie, A. Haarahiltunen, H. Savin, M. Yli-Koski, M. I. Asghar and J. Sinkkonen, Effect of internal gettering of iron on electrical characteristics of devices, Material Science and Engineering B 159, 269 (2009).

  • M.I. Asghar, M. Yli-Koski, H. Savin, A. Haarahiltunen, H. Talvitie, and J.Sinkkonen, Competitive iron gettering between internal gettering sites and boron implantation in CZ-silicon, Material Science and Engineering B 159, 224 (2009).

  • A. Haarahiltunen, H. Savin, M. Yli-Koski, H. Talvitie, M. I. Asghar, and J. Sinkkonen, As-grown iron precipitates and gettering in multicrystalline silicon, Material Science and Engineering B 159, 248 (2009).

  • Modeling boron diffusion gettering of iron in silicon solar cells H. Savin, H. Talvitie, M. Yli-Koski, A. Haarahiltunen, M.I. Asghar, J. Sinkkonen, Applied Physics Letters, 92, 2 (2008). post-print

  • Effect of transition metals on oxygen precipitation in silicon H. Talvitie, A. Haarahiltunen, M. Yli-Koski, H. Savin, J. Sinkkonen, Journal of Physics: Conference Series, 100, 4 (2008). post-print

  • A. Haarahiltunen, H. Talvitie, H. Savin, O. Anttila, M. Yli-Koski, M. I. Asghar, and J. Sinkkonen, Gettering of iron in silicon by boron implantation, Journal of Materials Science: Materials in Electronics 19, 41 - 45 (2008).

  • Experimental and theoretical study of heterogeneous iron precipitation in silicon A. Haarahiltunen, H. Väinölä, O. Anttila, M. Yli-Koski, Journal of Applied Physics , 101, 4 (2007). post-print

  • H. Savin, M. Yli-Koski, A. Haarahiltunen, H. Talvitie, J. Sinkkonen, Contactless Diagnostic Tools and Metallic Contamination in the Semiconductor Industry, ECS Transactions 11, No. 3, 319 - 330 (2007).

  • H. Savin, M. Yli-Koski, A. Haarahiltunen, H. Talvitie, J. Sinkkonen, Detection of Nickel in Silicon by Recombination Lifetime Measurements, Solid State Phenomena. 131, 183-188 (2007).

  • A. Haarahiltunen, H. Väinölä, O. Anttila, M. Yli-Koski, and J. Sinkkonen, Modeling and optimization of internal gettering of iron in silicon, ECS Transactions 3, 273-284 (2006).

  • Modeling of heterogeneous precipitation of iron in silicon A. Haarahiltunen, H. Väinölä, O. Anttila, E. Saarnilehto, M. Yli-Koski, J. Storgårds, J. Sinkkonen, Applied Physics Letters, 87, 15 (2005). post-print

  • Quantitative copper measurement in oxidized p-type silicon wafers using microwave photoconductivity decay H. Väinölä, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka, Applied Physics Letters, 87, 3 (2005). post-print

  • A. Istratov, H.Väinölä, W. Huber, and E.R.Weber, Gettering in SOI wafers: experimental studies and modeling, Semiconductor Science and Technology 20, 568-575 (2005).

  • M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka, Measurement of copper in p-type silicon using charge-carrier lifetime methods, Solid State Phenomena 108, 643-648 (2005).

  • A. Haarahiltunen, H. Väinölä, M. Yli-Koski, E. Saarnilehto, and J. Sinkkonen, Experimental study of internal gettering efficiency of iron detected by lifetime methods, Physica Scripta T114, 91-93 (2004).

  • M. Yli-Koski, H. Väinölä, A. Haarahiltunen, J. Storgårds, E. Saarnilehto, J. Sinkkonen, Light activated copper defects in p-type silicon studied by PCD, Physica Scripta T114, 69-72 (2004).

  • P. Zhang, H. Väinölä, A. Istratov, E. R. Weber, Re-dissolution of gettered iron impurities in Czochralski-grown silicon, Solid State Phenomena 95, 577-580 (2004).

  • H. Väinölä, P. Zhang, A. Haarahiltunen, A. Istratov, E.R. Weber, Simulations of iron re-dissolution from oxygen precipitates in CZ-silicon and its impact on gettering efficiency, Solid State Phenomena 96, 581-586 (2004).

  • Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering P. Zhang, H. Väinölä, A.A. Istratov, E.R. Weber, Applied Physics Letters, 83, 21 (2003). post-print

  • H. Väinölä, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, Sensitive copper detection in p-type CZ-silicon using µ- PCD, Journal of the Electrochemical Society 150, G790-G794 (2003).

  • P. Zhang, H. Väinölä, A. Istratov, and E. R. Weber, The thermal stability of iron precipitates in silicon after internal gettering, Physica B 340, 1051-1055 (2003).

  • H. Väinölä, J. Storgårds, M. Yli-Koski and J. Sinkkonen, Light induced change on the built-in potential of p/p+ structures and its effect on carrier lifetime measurements, Materials Science and Engineering B 91, 421-424 (2002).

  • H. Väinölä, J. Storgårds, M. Yli-Koski and J. Sinkkonen, Evaluation of Effective Carrier Lifetime in Epitaxial Silicon Layers, Solid State Phenomena 84, 771-776 (2002).

  • M. Yli-Koski, M. Palokangas, A. Haarahiltunen, H. Väinölä, J. Storgårds, H. Holmberg, J. Sinkkonen, Detection of low copper contamination in p-type silicon by means of microwave photoconductive decay measurements, Journal of Physics: Condensed Matter 14,13119-13125 (2002).

  • M. Yli-Koski, M. Palokangas, V. Sokolov, J. Storgårds, H. Väinölä and H. Holmberg, Recombination activity of iron in boron doped silicon, Physica Scripta T101, 86-88 (2002).

  • J. Storgårds, H. Väinölä, M. Yli-Koski and J. Sinkkonen, 3D effects on minority carrier recombination in homogeneous silicon wafers, Physica Scripta T101, 61-63 (2002).

  • H. Väinölä, J. Sinkkonen, J. Aho, Electromagnetic Effective Medium Material Parameters of a Periodic Multilayer Structure, Journal of the Korean Physical Society 39, 506-511 (2001).

Print Feedback

Page content by: | Last updated: 29.12.2016.