Epitaxy and semiconductor technology
Recent publications from Nanotechnology group
A. Lankinen, T. O. Tuomi, P. Kostamo, H. Jussila, S. Sintonen, H. Lipsanen, M. Tilli, J. Mäkinen, A. N. Danilewsky 2016
Thin Solid Films 603, 435-440 (2016).
M.G. Mynbaeva, A.V. Kremleva, D.A. Kirilenko, A.A. Sitnikova, A.I. Pechnikov, K.D. Mynbaev, V.I. Nikolaev, V.E. Bougrov, H. Lipsanen, A.E. Romanov 2016
Journal of Crystal Growth 445, 30–36 (2016)
Rudinsky, M.E.; Karpov, S.Yu.; Lipsanen, Harri; Romanov, A.E. 2015
Materials Physics and Mechanics 24 (3): 278-283
Tilli, Juha-Matti; Jussila, Henri; Yu, Kin Man; Huhtio, Teppo; Sopanen, Markku 2014
Journal of Applied Physics 115 (20): 203102
Subramaniyam, Nagarajan; Svensk, Olli; Lehtola, Lauri; Lipsanen, Harri; Sopanen, Markku 2014
Stress distribution in GaN nanopillars using confocal Raman mapping technique
Applied Physics Letters 104 (151906): 5
Sintonen, Sakari; Rudziński, Mariusz; Suihkonen, Sami; Jussila, Henri; Knetzger, Michael; Meissner, Elke; Danilewsky, Andreas; Tuomi, Turkka O.; Lipsanen, Harri 2014
Journal of Applied Physics 116 (8): 083504
Sintonen, Sakari; Suihkonen, Sami; Jussila, Henri; Lipsanen, Harri; Tuomi, Turkka O.; Letts, Edward; Hoff, Sierra; Hashimoto, Tadao 2014
Defect structure of a free standing GaN wafer grown by the ammonothermal method
Journal of Crystal Growth 406 (1): 72-77
Sintonen, Sakari; Suihkonen, Sami; Jussila, Henri; Danilewsky, Andreas; Stankiewicz, Romuald; Tuomi, Turkka O.; Lipsanen, Harri 2014
Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography
Applied Physics Express 7 (9): 091003
Jussila, H.; Yu, K.M.; Kujala, J.; Tuomisto, F.; Nagarajan, S.; Lemettinen, J.; Huhtio, T.; Tuomi, T.O.; Lipsanen, H.; Sopanen, M. 2014
Journal of Physics D: Applied Physics 47 (47): 075106
Olsson, Anders; Aierken, Abuduwayiti; Jussila, Henri; Bauer, Jan; Oksanen, Jani; Breitenstein, Otwin; Lipsanen, Harri; Tulkki, Jukka 2014
Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures
Journal of Applied Physics (8): 083105